ty p-channel mos fet 4v drive pch mos fet RSR020P03 z s t ru ctu r e z ex te rna l dime ns ions (unit : mm) z f eatu r es 1) low on-resist ance 2) s p ace saving ? small surface mount p a ckage (t smt 3 ) 3) 4v drive each lead has same dimensions (1) gate z a pplic a t ions (2) source (3) dr ain tsmt3 0 ~ 0.1 0.16 0.85 1.0max 0.7 0.3 ~ 0.6 ( 2 ) ( 1 ) ( 3 ) 2.9 2.8 1.9 1.6 0.95 0.95 0.4 abbreviated symbol : wz sw itching z packag in g sp ecificatio n s z inne r c i rc uit (1) gate (2) source (3) drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (3) (1) (2) package code taping basic ordering unit (pieces) RSR020P03 tl 3000 type z a b solute maximum ratings (t a= 25 c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) ? 30 2 8 20 ? 0.8 ? 8 1 150 ? 55 to + 150 z t h e rmal resist an ce parameter c/w rth(ch-a) symbol limits unit channel to ambient 125 ? mounted on a ceramic board ? product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 1 of 2
z electrical ch aracteristics (t a= 25 c) parameter symbol i gss y fs v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed min. ?? 10 av gs = 2 0 v, v ds =0v v dd ? 15v typ. max. unit conditions ? 30 ?? vi d = ? 1ma, v gs =0v ?? ? 1 av ds = ? 30v, v gs =0v ? 1.0 ?? 2.5 v v ds = ? 10v, i d = ? 1ma ? 8 5 120 i d = ? 2a, v gs = ? 10v ? 135 1 9 0 m ? m ? m ? i d = ? 1a, v gs = ? 4.5v ? 150 2 1 0 i d = ? 1a, v gs = ? 4v 1.4 ?? sv ds = ? 10v, i d = ? 1a ? 370 ? pf v ds = ? 10v ? 80 55 ? pf v gs =0v ? 8 ? p f f=1mhz ? 10 ? ns ? 35 ? ns ? 11 ? ns ? 4.3 ? ns ? 1.4 nc ? 1.5 ? ? nc v gs = ? 5v ?? nc i d = ? 2a v dd ? 15 v i d = ? 1a v gs = ? 10v r l =15 ? r g =10 ? r l =7.5 ? r g =10 ? z bo d y d i o d e ch aracteristics (source-drain) (t a= 25 c) v sd ?? forward voltage parameter symbol min. typ. ? pulsed ? ? 1.2 v i s = ? 0.8a, v gs =0v max. unit conditions RSR020P03 product specification 4008-318-123 sales@twtysemi.com http://www.twtysemi.com 2 of 2
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